q?v~zy??q?v?_rb]r?qcabeq HFP18N50U bv dss = 500 v r ds(on) typ = 0.22
i d =18a ? originative new design ? superior avalanche rugged technology ? robust gate oxide technology ? very low intrinsic capacitances ? excellent switching characteristics ? unrivalled gate charge : 58 nc (typ.) ? extended safe operating area ? lower r ds(on) : 0.22
7 \ s # 9 gs =10v ? 100% avalanche tested features absolute maximum ratings t c =25 e unless otherwise specified HFP18N50U 500v n-channel mosfet symbol parameter value units v dss drain-source voltage 500 v i d drain current ? continuous (t c = 25 e ) 18 a drain current ? continuous (t c = 100 e ) 11.4 a i dm drain current ? pulsed (note 1) 72 a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 950 mj i ar avalanche current (note 1) 18 a e ar repetitive avalanche energy (note 1) 23.6 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 e ) - derate above 25 e 236 w 1.89 w/ e t j , t stg operating and storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 300 e 1.gate 2. drain 3. source 2 1 3 to-220 thermal resistance characteristics symbol parameter typ. max. units r jc junction-to-case -- 0.53 e /w r cs case-to-sink 0.5 -- r ja junction-to-ambient -- 62.5 apr 2014
q?v~zy??q?v?_rb]r?qcabeq HFP18N50U notes ; 1. repetitive rating : pulse width limited by maximum junction temperature 2. l=5.3mh, i as =18a, v dd =50v, r g =25 : , starting t j =25 q c 3. i sd ? $ ,di/dt ? $ v , v dd ? % 9 dss , starting t j =25 q c 4. pulse test : pulse width ? v ' x w \ & \ f o h ? 5. essentially independent of operating temperature electrical characteristics t c =25 q c unless otherwise specified i s continuous source-drain diode forward current -- -- 18 a i sm pulsed source-drain diode forward current -- -- 72 v sd source-drain diode forward voltage i s = 18 a, v gs = 0 v -- -- 1.4 v trr reverse recovery time i s = 18 a, v gs = 0 v di f /dt = 100 a/ v (note 4) -- 375 -- qrr reverse recovery charge -- 4.2 -- & symbol parameter test conditions min typ max units v gs gate threshold voltage v ds = v gs , i d = 250 3 2.5 -- 4.5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 9.0 a -- 0.22 0.265 ? on characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 3 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 3 , referenced to 25 e -- 0.5 -- v/ e i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v -- -- 1 3 v ds = 400 v, t c = 125 e -- -- 10 3 i gss gate-body leakage current v gs = 30 v, v ds = 0 v -- -- 100 2 off characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 3300 4300 ? c oss output capacitance -- 290 380 ? c rss reverse transfer capacitance -- 16 21 ? dynamic characteristics t d(on) turn-on time v ds = 250 v, i d = 18 a, r g = 25 ? (note 4,5) -- 80 170 t r turn-on rise time -- 80 170 t d(off) turn-off delay time -- 190 390 t f turn-off fall time -- 60 130 q g total gate charge v ds = 400 v, i d = 18 a, v gs = 10 v (note 4,5) -- 58 76 nc q gs gate-source charge -- 16 -- nc q gd gate-drain charge -- 17 -- nc switching characteristics source-drain diode maximum ratings and characteristics package marking and odering information device marking week marking package packing quantity rohs status HFP18N50U ywwx to-220 tube 50 pb free HFP18N50U ywwxg to-220 tube 50 halogen free
q?v~zy??q?v?_rb]r?qcabeq HFP18N50U typical characteristics figure 1. on region characteristics figure 2. transfer characteristics figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 5. capacitance characteristics figur e 6. gate charge characteristics 0 102030405060 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v
note : i d = 18a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 246810 0.1 1 10 100 -25 o c 25 o c * notes : 1. v ds = 30v 2. 300us pulse test v gs , gate-source voltage [v] i d , drain current [a] 150 o c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , reverse drain current [a] 150 o c 0 8 16 24 32 40 48 56 0.0 0.1 0.2 0.3 0.4 0.5 0.6 v gs = 20v v gs = 10v
note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 10 0 10 1 10 0 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v bottom : 5.0 v * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v]
q?v~zy??q?v?_rb]r?qcabeq HFP18N50U typical characteristics (continued) figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve 25 50 75 100 125 150 0 3 6 9 12 15 18 i d , drain current [a] t c , case temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2
note : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] t 2 t 1 p dm 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 p s 100 ms dc 10 ms 1 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0
note : 1. v gs = 10 v 2. i d = 9.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 b >>?? ?? >>? 1. z - & (t) = 0.52 b]>? ?>>?
?$> 2. duty factor, d=t 1 /t 2 3. t jm - t c = p dm * z - & (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z - & (t), thermal response t 1 , square wave pulse duration [sec]
q?v~zy??q?v?_rb]r?qcabeq HFP18N50U fig 12. gate charge test circuit & waveform fig 13. resistive switching test circuit & waveforms fig 14. unclamped inductive switching test circuit & waveforms e as =l l i as 2 ---- 2 1 -------------------- bv dss -- v dd bv dss v in v ds 10% 90% t d(on) t r t on t off t d(off) t f charge v gs 10v q g q gs q gd v dd v ds bv dss t p v dd i as v ds (t) i d (t) time v dd ( 0.5 rated v ds ) 10v v ds r l dut r g 3ma v gs dut v ds 300nf .
200nf 12v same type as dut 10v dut r g l i d
q?v~zy??q?v?_rb]r?qcabeq HFP18N50U fig 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i s controlled by pulse period v dd l i s 10v v gs ( driver ) i s ( dut ) v ds ( dut ) v dd body diode forward voltage drop v f i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period --------------------------
q?v~zy??q?v?_rb]r?qcabeq HFP18N50U package dimension 9.19 0.20 3 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ { v t y y w g o h p g
q?v~zy??q?v?_rb]r?qcabeq HFP18N50U 0.20 2.74 0.20 15.44 0.20 13.28 0.20 2.67 0.20 6.30 0.20 0.81 0.20 1.27 0.20 1.27 0.20 4.57 0.20 0.40 0.20 2.67 0.20 9.14 0.20 3 0.20 2.54typ 2.54typ { v t y y w g o i p g package dimension
|
